2011/06/03 ver.1 page 1 SPC4533W n & p pair enhancement mode mosfet description applications the SPC4533W is the n- and p-channel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z lcd display inverter features pin configuration(sop ? 8p) part marking ? n-channel 30v/10a,r ds(on) = 25m ? @v gs = 10v 30v/8.0a,r ds(on) = 36m ? @v gs = 4.5v ? p-channel -30v/-6.0a,r ds(on) = 42m ? @v gs =- 10v -30v/-3.0a,r ds(on) = 78m ? @v gs =-4.5v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? sop ? 8p package design pin description
2011/06/03 ver.1 page 2 SPC4533W n & p pair enhancement mode mosfet pin symbol description 1 s1 source 1 2 g1 gate 1 3 s2 source 2 4 g2 gate 2 5 d2 drain 2 6 d2 drain 2 7 d1 drain 1 8 d1 drain 1 ordering information part number package part marking SPC4533Ws8rgb sop- 8p SPC4533W SPC4533Ws8rgb : 13? tape reel ; pb ? free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate ?source voltage v gss 20 20 v t a =25 10 -6.0 continuous drain current(t j =150 ) t a =70 i d 6 -4.0 a pulsed drain current i dm 20 -12 a power dissipation t a =25 p d 2.0 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 80 80 /w
2011/06/03 ver.1 page 3 SPC4533W n & p pair enhancement mode mosfet n channel electrical characteristics (t a =25 unless otherwise noted ) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =24v,v gs =0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0v t j =55 5 ua on-state drain current i d(on) v ds 5v,v gs =10v 25 a v gs = 10v,i d =10a 18 25 drain-source on-resistance r ds(on) v gs =4.5v,i d =5.6a 25 36 m ? forward transconductance gfs v ds =15v,i d =10a 10 s diode forward voltage v sd i s =1a,v gs =0v 1.2 v dynamic total gate charge q g 7.2 gate-source charge q gs 1.4 gate-drain charge q gd v ds =20v,v gs =4.5v i d = 10a 2.2 nc input capacitance c iss 570 output capacitance c oss 81 reverse transfer capacitance c rss v ds =15v gs =0v f=1mhz 65 pf t d(on) 4.1 turn-on time t r 9.8 t d(off) 15.5 turn-off time t f v dd =12v, i d =5.0a, v gen =10v, r g =3.3 ? 6.1 ns
2011/06/03 ver.1 page 4 SPC4533W n & p pair enhancement mode mosfet p channel electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua -30 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua -1.0 -2.5 v gate leakage current i gss v ds =0v,v gs =20v 100 na v ds =-24v,v gs =0v -1 zero gate voltage drain current i dss v ds =-24v,v gs =0v t j =55 -5 ua on-state drain current i d(on) v ds Q -5v,v gs =-10v -6 a v gs =- 10v,i d =-6a 0.035 0.042 drain-source on-resistance r ds(on) v gs =- 4.5v,i d =-3a 0.065 0.078 ? forward transconductance gfs v ds =-10.0v,i d =-6a 6 s diode forward voltage v sd i s =-6a,v gs =0v -1.2 v dynamic total gate charge q g 6.4 gate-source charge q gs 2.7 gate-drain charge q gd v ds =-20v, v gs =-4.5v i d =-6a 3.1 nc input capacitance c iss 650 output capacitance c oss 270 reverse transfer capacitance c rss v ds =-24v,v gs =0v f=1mhz 104 pf t d(on) 9 turn-on time t r 16 t d(off) 21 turn-off time t f v dd =-12v, i d =-5.0a, v gen =-10v r g =3.3 ? 22 ns
2011/06/03 ver.1 page 5 SPC4533W n & p pair enhancement mode mosfet n channel typical characteristics fig. 1 typical output characteristics fig. 2 on-resistance vs. gate voltage fig. 3 forward characteristics of diode fig. 4 gate charge characteristics fig. 5 vgs vs. junction temperature fig. 6 on-resistance vs. junction temperature
2011/06/03 ver.1 page 6 SPC4533W n & p pair enhancement mode mosfet n channel typical characteristics fig. 7 typical capacitance characterist ics fig. 8 maximum safe operation area fig. 9 effective transient thermal impedence fig. 10 switching time waveform fig. 11 unclamped inductive waveform
2011/06/03 ver.1 page 7 SPC4533W n & p pair enhancement mode mosfet p chaeenl typical characteristics fig. 1 typical output characteristics fig. 2 on-resistance vs. gate voltage fig. 3 forward characteristics of diodes fig. 4 gate charge characteristics fig. 5 vgs vs. junction temperature fig. 6 on-resistance vs junction temp
2011/06/03 ver.1 page 8 SPC4533W n & p pair enhancement mode mosfet p channel typical characteristics fig. 7 typical capacitance characteristic s fig. 8 maximum safe operation area fig. 9 effective transient thermal impedance fig. 10 switching time waveform fig. 11 unclamped inductive waveform
2011/06/03 ver.1 page 9 SPC4533W n & p pair enhancement mode mosfet sop- 8 package outline
2011/06/03 ver.1 page 10 SPC4533W n & p pair enhancement mode mosfet information provided is alleged to be exact and consistent. sync power corporation presumes no responsibility for the penalties of use of such information or for any violation of pa tents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise under any pate nt or patent rights of sync power corporation. conditions mentioned in this publication ar e subject to change without notice. this p ublication surpasses and replaces all information previously supplied. sync power corporation products are not authorized for use as critical components in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of sync power corporation ?2011 sync power corporation ? printed in taiwan ? all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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